Promising potential applications: longer-lasting batteries, more efficient solar cells, corrosion prevention, circuit boards, display panels, and medicinal technologies such as the point-of-care detection of diseases
Graphene
(top) and related structures: fullerene (bottom left); carbon nanotubes (bottom
centre); and graphite (bottom right)
The current methods of large-scale graphene synthesis include many variations
of the so-called ‘Hummers’ method, devised by William Hummers in the late 1950s
The method utilizes powerful oxidizing agents and strong acids to strip apart the graphene layers from a source of graphite – usually a high grade graphite powder available from any good chemical supplier. However, as this method creates graphene oxide, it is necessary to reduce the graphene oxide further to create graphene, termed reduced graphene oxide, which depending on the success of the reduction process can yield near fully reduced graphene oxide (viz. graphene, usually termed rGO) or partially reduced graphene oxide
The best example to date of a chemically reduced graphene was presented in 2008 by Tung et
al., who cleverly exploited the powerful
reducing ability of hydrazine by immersing
graphene oxide paper in pure hydrazine. Reportedly,
after a few hours
the paper disappears
to leave a
suspension of hydrazine
with graphene platelets
dispersed within. The
graphene/hydrazine suspension can
be spin-coated upon a substrate
such as silica
for characterization
The implications of such a highly permitting electron transport
material are potentially profound in
applications such as field effect transistors (FETs), which, even as of 2010, could operate at frequencies as high as 100 GHz
- a high thermal conductivity of 5000 W m-1/K
- a high thermal conductivity of 5000 W m-1/K
- a high Young’s modulus of ~ 1 TPa
- extraordinarily large specific surface area of 2630 m2/g
II. GRAPHENE APPLICATION
1. High-speed electronics
high conductivity => high-speed electronics
Graphene is a zero band gap material and hence has yet to make its commercial debut in this manner
One particular problem with graphene based transistors originates from defects emerging upon the graphene sheet during the fabrication process of the device. That said, a literature report from 2010 emerged which utilized a self-aligning Co2Si–Al2O3 nanowire as a gate in the graphene transistor which according to their work prevented device degradation and exhibited operational frequencies of 100–300 GHz
Researchers investigating the storage properties of graphene
oxides have shown that indium tin oxide electrodes modified with polymers and graphene oxide exhibit the
write-read-erase-read-rewrite cycle for a non-volatile memory device
Current/voltage curves typical of the indium tin oxide electrode
modified with polymers and graphene
oxide. The curves 1–5 represent the
relevant stage in the write-read-erase-read-rewrite cycle
3. Smart Windows/OLED displays4. Supercapacitors
5. Solar cells
6. Electrochemical sensing
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